型号:

SIE836DF-T1-GE3

RoHS:无铅 / 符合
制造商:Vishay Siliconix描述:MOSFET N-CH D-S 200V POLARPAK
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
SIE836DF-T1-GE3 PDF
标准包装 3,000
系列 TrenchFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 标准
漏极至源极电压(Vdss) 200V
电流 - 连续漏极(Id) @ 25° C 18.3A
开态Rds(最大)@ Id, Vgs @ 25° C 130 毫欧 @ 4.1A,10V
Id 时的 Vgs(th)(最大) 4.5V @ 250µA
闸电荷(Qg) @ Vgs 41nC @ 10V
输入电容 (Ciss) @ Vds 1200pF @ 100V
功率 - 最大 104W
安装类型 表面贴装
封装/外壳 10-PolarPAK?(SH)
供应商设备封装 10-PolarPAK?(SH)
包装 带卷 (TR)
其它名称 SIE836DF-T1-GE3TR
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